The studies have focused towards the properties of TGN, and a tunable three-layer graphene single-electron transistor was experimentally realized [6, 26]. In this paper, a model

for TGN Schottky-barrier (SB) FET is analyzed which can be assumed as a 1D device with width and thickness less than the de Broglie wavelength. The presented analytical model involves a range of nanoribbons placed between a highly conducting substrate with the back gate and the top gate controlling the source-drain selleck compound current. The Schottky barrier is defined as an electron or hole barrier which is caused by an electric dipole charge distribution related to the contact and difference created between a metal and semiconductor under an equilibrium condition. The barrier is found to be very abrupt at the top of the metal due to the charge being mostly on the Epoxomicin datasheet surface [27–31]. TGN with different stacking sequences (ABA and ABC) indicates different electrical properties, which can be used in the SB structure. This means that by engineering the stack of TGN, Schottky contacts can be designed, as shown in Figure 2. Between two different arrangements

of TGN, the MK-2206 nmr semiconducting behavior of the ABA stacking structure has turned it into a useful and competent channel material to be used in Schottky transistors [32]. Figure 2 Schematic of TGN SB contacts. In fact, the TGN with ABC stacking shows a semimetallic behavior, while the ABA-stacked TGN shows a semiconducting property [32]. A schematic view of TGN SB FET is illustrated in Figure 3, in which ABA-stacked TGN forms the channel between the source and drain contacts. The contact size has a smaller effect on the double-gate (DG) GNR FET compared to the single-gate (SG) FET. Figure 3 Schematic representation of TGN SB FET. Due to the fact that the GNR channel is sandwiched or wrapped through by the gate, the field lines from the source and drain contacts Carnitine dehydrogenase were seen to be properly screened by the gate electrodes, and therefore, the source and drain contact geometry has a lower impact. The operation of TGN SB FET is followed by the

creation of the lateral semimetal-semiconductor-semimetal junction under the controlling top gate and relevant energy barrier. Methods TGN SB FET model The scaling behaviors of TGN SB FET are studied by self-consistently solving the energy band structure equation in an atomistic basis set. In order to calculate the energy band structure of ABA-stacked TGN, the spectrum of full tight-binding Hamiltonian technique has been adopted [33–37]. The presence of electrostatic fields breaks the symmetry between the three layers. Using perturbation theory [38] in the limit of υ F |k| « V « t ⊥ gives the electronic band structure of TGN as [35, 39] (1) where k is the wave vector in the x direction, , t ⊥ is the hopping energy, ν f is the Fermi velocity, and V is the applied voltage.