In structures A to C, the potential height (toward the GaN buffer layer) created by the EBL is increased, which prevents the transport electrons from spilling into the GaN buffer layer, reducing the HEMT’s subthreshold drain leakage current. The functionality of EBL is further examined by inspecting the cross-sectional potential profiles for all buy Verubecestat {Selleck Anti-infection Compound Library|Selleck Antiinfection Compound Library|Selleck Anti-infection Compound Library|Selleck Antiinfection Compound Library|Selleckchem Anti-infection Compound Library|Selleckchem Antiinfection Compound Library|Selleckchem Anti-infection Compound Library|Selleckchem Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|buy Anti-infection Compound Library|Anti-infection Compound Library ic50|Anti-infection Compound Library price|Anti-infection Compound Library cost|Anti-infection Compound Library solubility dmso|Anti-infection Compound Library purchase|Anti-infection Compound Library manufacturer|Anti-infection Compound Library research buy|Anti-infection Compound Library order|Anti-infection Compound Library mouse|Anti-infection Compound Library chemical structure|Anti-infection Compound Library mw|Anti-infection Compound Library molecular weight|Anti-infection Compound Library datasheet|Anti-infection Compound Library supplier|Anti-infection Compound Library in vitro|Anti-infection Compound Library cell line|Anti-infection Compound Library concentration|Anti-infection Compound Library nmr|Anti-infection Compound Library in vivo|Anti-infection Compound Library clinical trial|Anti-infection Compound Library cell assay|Anti-infection Compound Library screening|Anti-infection Compound Library high throughput|buy Antiinfection Compound Library|Antiinfection Compound Library ic50|Antiinfection Compound Library price|Antiinfection Compound Library cost|Antiinfection Compound Library solubility dmso|Antiinfection Compound Library purchase|Antiinfection Compound Library manufacturer|Antiinfection Compound Library research buy|Antiinfection Compound Library order|Antiinfection Compound Library chemical structure|Antiinfection Compound Library datasheet|Antiinfection Compound Library supplier|Antiinfection Compound Library in vitro|Antiinfection Compound Library cell line|Antiinfection Compound Library concentration|Antiinfection Compound Library clinical trial|Antiinfection Compound Library cell assay|Antiinfection Compound Library screening|Antiinfection Compound Library high throughput|Anti-infection Compound high throughput screening| devices under a closed-gate condition of V g = −5 V with V ds increasing

from V ds = 20 V to V ds = 60 V in 20-V interval (Figure  4b). Accordingly, for the conventional AlGaN/GaN HEMT, there is already no potential barrier toward the GaN buffer layer even operating at the low drain bias of V ds = 20 V. The situations become worse for the higher-drain-bias conditions of V ds = 40 V and V ds = 60 V. Thus, it is the main reason responsible for the smallest V br of the conventional AlGaN/GaN HEMT. In contrast, introducing https://www.selleckchem.com/ferroptosis.htmll the EBL can raise the conduction band of the GaN channel layer by the bandgap difference, building a deeper potential well to confine 2-DEG, preventing punchthrough. Such effect is noticeable in structure C even when the HEMT is operated under

a high-drain-bias condition. Additionally, due to the large electric field induced at the interfaces of AlGaN/GaN/AlGaN QW EBL, the potential decline of structure C in the conduction band (marked by the light-blue rectangle) with the increasing of V ds is less pronounced, considerably postponing the device breakdown. Figure 4 Cross sections of the electron concentration distribution at a closed-gate condition and cross-sectional potential profiles. (a) N e distributions in all devices at a closed-gate

condition of V g = −5 V and V ds = 80 V. (b) Cross-sectional potential profiles for all devices, where V g = −5 V, V ds = 20 V (black line), V ds = 40 V (red line), and V ds = 60 V (blue line). The EBL region is marked by the light-blue rectangle. Figure  5a plots the 2-DEG density as a function of V g for all devices. As compared to structures A to C, the conventional AlGaN/GaN HEMT has to be supplied with a much larger negative gate voltage to close the 2-DEG channel and diminish the 2-DEG density to a background value of approximately Oxymatrine 102 cm−2. Additionally, the estimated slope of the conventional AlGaN/GaN HEMT (i.e., the difference of 2-DEG density divided by the difference of V g) is not as steep as that of structures A to C, suggesting a weak confinement of transport electrons. However, the 2-DEG density of structures A to C increases rapidly at a low gate voltage (−1.25 V ≤ V g ≤ −0.50 V), and that becomes saturated to approximately 1011 cm−2 at higher V g. Figure  5b shows the 2-DEG mobility (μ) versus 2-DEG density for all devices. The 2-DEG mobility of all devices initially increases along with the increasing of 2-DEG density, primarily attributed to the enhancement of the screening effect against the ionized ion scattering [25–27].