In order to describe

dielectric relaxation, many mathematic models were proposed. After mathematical models were finalized for fitting experimental data, physical mechanisms of dielectric relaxation were under investigation. Dielectric relaxation behaviors observed in the high-k dielectrics were partly due to the level of stress in the crystalline grains, depending on the grain size, MLN2238 analogous to the behavior of ferroelectric ceramics. As surface stress changes, glasslike transition temperature varied considerably. Dielectric relaxation appears to be a common feature in ferroelectrics associated with non-negligible ionic conductivity. Methods Sample preparation HfO2, ZrO2, and LaAlO3 thin films were deposited on n-type Si(100) substrates using liquid injection metal organic chemical vapor deposition (MOCVD) learn more or atomic layer deposition (ALD), carried out on a modified Aixtron AIX 200FE AVD reactor (Herzogenrath, Germany) mTOR inhibitor cancer fitted with the “Trijet”™ liquid injector system. During the MOCVD experiments, oxygen was introduced at the inlet of the reactor. For the ALD experiments, the oxygen was replaced by water vapor, which was controlled by a pneumatic valve. The substrate was rotated throughout all experiments for good uniformity. Auger electron spectroscopy (AES) results suggested they are stoichiometric films. All the high-k dielectric layers considered were 16 nm in thickness. La x Zr1−x O2−δ thin films were

deposited onto n-type Si(100) wafers by the same modified Aixtron AIX 200FE AVD reactor liquid injection ALD at 300°C. Both Zr and La sources were Cp-based precursors ([(MeCp)2ZrMe(OMe)] and [(iPrCp)3La]). The La concentration was varied in different films. Particular attention has been given Telomerase to the results from films

with a La concentration of x = 0.09 (55 nm) and x = 0.35 (35 nm) but results are also included from films with a concentration of x = 0.22 (50 nm) and x = 0, i.e., un-doped ZrO2 (35 nm). Post deposition annealing was performed at 900°C in a pure N2 ambient for 15 min. To form MOS capacitors (Au/La x Zr1−x O2/IL/n-Si, where IL stands for interfacial layer), metal (Au) gate electrodes with an effective contact area of 4.9 × 10−4 cm2 were evaporated onto the samples. The backsides of the Si samples were cleaned with a buffered HF solution and subsequently a 200-nm-thick film of Al was deposited by thermal evaporation to form an ohmic back contact. La2Hf2O7 thin films were deposited on n-type Si(100) substrates by the same liquid injection ALD at 300°C. Both Hf and La sources are Cp-based precursors ([(MeCp)2HfMe(OMe)] and [(iPrCp)3La]). The composition of the La-doped HfO2 thin films was estimated to be La2Hf2O7. Selected thin films were subjected to 900°C post-deposition annealing (PDA) in N2 for 15 min. Amorphous Ce x Hf1−x O2 thin films (x = 0.1) were deposited on n-type Si(100) substrates using the same liquid injection ALD.