The main motivation behind this study is the LY333531 solubility dmso fact that nanostructures will act as a second ARC layer with an effective refractive index so that the refractive index of the total structure will perform as a double-layer AR coating layer. The optical and electrical properties ofthe III-V solar cells with the above-proposed double-layer

AR coating in this study are measured and compared. Methods The epitaxial structure of the InGaP/GaAs/Ge T-J solar cells used in this study is shown in Figure 1. The structure was grown on p-type Ge substrates using a metal organic chemical vapor deposition system (MOCVD). During epitaxial growth, trimethylindium (TMIn), trimethylgallium (TMGa), arsine (AsH3), and phosphine (PH3) were used as source materials of In, Ga, As, and P, respectively, and silane (SiH4) and diethylzinc (DEZn) were used as the n-type and p-type doping sources, respectively. The epitaxial layers of the T-J solar cells were grown on a p-type Ge substrate at 650°C with a reactor pressure of 50 mbar [17]. After the epitaxial layers RXDX-101 cost were grown, the wafers were cleaned using chemical solutions of trichloroethylene, acetone, methanol, and deionized water and dried by blowing N2 gas. A back electrode Ti (500 Å)/Pt (600 Å)/Au (2,500 Å) was then deposited immediately on the cleaned p-type Ge substrate using an electron-beam evaporator. Metal was annealed at 390°C for 3 min in an H2 ambient for

ohmic contact formation. The front-side n-type contact was formed by deposition of Ni/Ge/Au/Ni/Au with a thickness of 60/500/1,000/400/2,500 Å. The 75-nm silicon nitride AR coating film was deposited using the plasma-enhanced chemical vapor deposition (PECVD) system on the solar cell device. The shadow loss due to the front contacts was 6.22%, and the total area of the solar cell was 4.4 × 4.4 mm2 with Farnesyltransferase an illuminated active area of 0.125 cm2. After the device process was finished, a ZnO nanotube was grown using the hydrothermal method. The substrate was vertically positioned in a 60-mL

mixture with 40 mL of zinc nitrate hexahydrate (Zn(NO3)2‧6H2O) (0.025 mol/L) and 10 mL of hexamethenamine (C6H12N4 (0.025 mol/L)). The substrate was then placed into a metal can with a capacity of 100 mL. The metal can was MEK inhibitor sealed and heated at 90°C making it easy to fabricate over a large area. Therefore, the ZnO nanotube fabrication technology has a potential which can be applied to the commercial process for the solar cell industry. The surface morphology of the ZnO nanotube was characterized by a field-emission scanning electron microscope (Hitachi S-4700I, Tokyo, Japan). The reflections of the samples were analyzed with an ultraviolet-visible (UV-VIS) spectrophotometer using an integrating sphere. For solar cell measurement, the current-voltage (I-V) characteristics of the samples were measured under a one sun AM1.5 (100 mW/cm2) solar simulator.